EL display device, driving method thereof, and electronic equipment provided with the EL display device

ABSTRACT

An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element ( 109 ) disposed in a pixel ( 104 ) are controlled by time, and the influence by the characteristic variability of a current controlling TFT ( 108 ) is prevented. When this method is used, a data signal side driving circuit ( 102 ) and a gate signal side driving circuit ( 103 ) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to an EL (electro-luminescence) display deviceformed by constructing a semiconductor device (i.e., a device made of asemiconductor thin film) on a substrate and relates to electronicequipment (electronic device) in which the EL display device is used asa display panel (display portion).

2. Description of Related Art

In recent years, great advances have been made in a technique forforming TFTs on a substrate, and development has proceeded in theapplication thereof to an active matrix type display. Especially, a TFTusing a polysilicon film is higher in electron field-effect mobilitythan a conventional TFT using an amorphous silicon film, and can operateat a high speed. Therefore, it has been made possible to control a pixelby a driving circuit formed on the same substrate on which the pixel isalso formed, although the pixel had been conventionally controlled bythe driving circuit disposed outside the substrate.

The active matrix type display is attracting public attention because itcan obtain various advantages, such as reduced manufacturing costs,reduced size of the display device, increased yields, and reducedthroughput, by constructing various circuits or elements on the samesubstrate.

Conventionally, the pixel of the active matrix type EL display has beengenerally constructed as shown in FIG. 3. In FIG. 3, reference character301 designates a TFT that functions as a switching element (hereinafter,referred to as switching TFT), 302 designates a TFT that functions as anelement (current controlling element) to control a current supplied toan EL element 303 (hereinafter, referred to as current controlling TFT),and 304 designates a capacitor (capacitance storage). The switching TFT301 is connected to a gate wiring line 305 and a source wiring line 306(data wiring line). The drain of the current controlling TFT 302 isconnected to the EL element 303, and the source thereof is connected toa current-feed line 307.

When the gate wiring line 305 is selected, the gate of the switching TFT301 is opened, the data signal of the source wiring line 306 is thenstored in the capacitor 304, and the gate of the current controlling TFT302 is opened. After the gate of the switching TFT 301 is closed, thegate of the current controlling TFT 302 is kept opening by the chargestored in the capacitor 304. During that interval, the EL element 303emits light. The amount of luminescence of the EL element 303 changesaccording to the amount of a flowing current.

At this time, the amount of current supplied to the EL element 303 iscontrolled by the gate voltage of the current controlling TFT 302. Thisis shown in FIG. 4.

FIG. 4(A) is a graph showing transistor characteristics of the currentcontrolling TFT. Reference character 401 is called Id-Vg characteristic(or Id-Vg curve). Herein, Id is a drain current, and Vg is a gatevoltage. The amount of a flowing current corresponding to an arbitrarygate voltage can be known from this graph.

Normally, the region shown by the dotted line 402 of the Id-Vgcharacteristic is used when the EL element is driven. An enlarged viewof the enclosed region of the dotted line 402 is shown in FIG. 4(B).

In FIG. 4(B), the region shown by the oblique lines is called asub-threshold region. In practice, it is indicated as a region in whicha gate voltage is near or less than a threshold voltage (Vth). The draincurrent exponentially changes according to the change of the gatevoltage in this region. Using this region, the current is controlled bythe gate voltage.

The data signal input into a pixel by opening the switching TFT 301 isfirst stored in the capacitor 304, and the data signal directly acts asthe gate voltage of the current controlling TFT 302. At this time, thedrain current with respect to the gate voltage is determined byone-to-one according to the Id-Vg characteristic shown in FIG. 4(A).That is, a given current flows through the EL element 303 correspondingto the data signal, and the EL element 303 emits light by the amount ofluminescence corresponding to the amount of the current.

The amount of luminescence of the EL element is controlled by the datasignal, as mentioned above, and thereby gradation display is performed.This is a so-called analog gradation method, in which the gradationdisplay is performed by a change in the amplitude of the signal.

However, there is a defect in that the analog gradation method is veryweak in the characteristic variability of TFTs. For example, let it beassumed that the Id-Vg characteristic of a switching TFT differs fromthat of a switching TFT of an adjacent pixel that displays the samegradation level (i.e., a shift is performed toward a plus or a minusside overall).

In this situation, drain currents of the switching TFTs differ from eachother, though depending on the level of the variability, and thus adifferent gate voltage will be applied to the current controlling TFT ofeach pixel. In other words, a different current flows through each ELelement, and, as a result, a different amount of luminescence isemitted, and the display of the same gradation level cannot be achieved.

Additionally, even if an equal gate voltage is applied to the currentcontrolling TFT of each pixel, the same drain current cannot be outputif the Id-Vg characteristic of the current controlling TFTs hasvariability. Additionally, as is clear from FIG. 4(A), a region is usedin which the drain current exponentially changes according to a changein the gate voltage, and, therefore, a situation will occur in which, ifthe Id-Vg characteristic shifts most slightly, the amount of current tobe output becomes greatly different even if an equal gate voltage isapplied thereto. If so, adjacent pixels will have a great difference inthe amount of luminescence of the EL element.

In practice, each individual variability of the switching TFT and thecurrent controlling TFT acts synergistically, and a stricter conditionwill be imposed. The analog gradation method is extremely sensitive tothe characteristic variability of the TFTs, as mentioned above, and thishas caused an obstruction to realizing the multicolor of theconventional active matrix type EL display device.

SUMMARY OF THE INVENTION

The present invention was made in consideration of the above problem,and it is an object of the present invention to provide an active matrixtype EL display device capable of performing clear multi-gradation colordisplay. It is another object of the present invention to providehigh-performance electronic equipment provided a with such an activematrix type EL display device.

The present applicant thought that a digital gradation method in whichthe current controlling TFT is used only as a switching element forsupplying a current is better than the conventional analog gradationmethod in which the amount of luminescence of the EL element iscontrolled by controlling a current, in order to design a pixelstructure to be unsusceptible to the influence of the characteristicvariability of the TFT.

From this, the present applicant thought that the most desirablegradation display method in the active matrix type EL display device isa divided gradation display method, more specifically, a gradationdisplay method under a time-division method (hereinafter, designated astime-division gradation or time-division gradation display).

In practice, the time-division gradation display is performed asfollows. A description is herein given of a case in which the full colordisplay of 256-gradation (16,770,000 colors) is performed according toan 8-bit digital driving method.

First of all, one frame of an image is divided into eight sub-frames.Herein, one cycle when data is input to all pixels of a displayed areais called one frame. Oscillation frequency in a normal EL display deviceis 60 Hz, in other words, 60 frames are formed per second. Flickering ofthe image, for example, begins to be visually conspicuous when thenumber of frames per second falls below this. A divided frame obtainedby dividing one frame into a plurality of frames is called a sub-frame.

One sub-frame is divided into an address period (Ta) and a sustainedperiod (Ts). The address period is the entire time required to inputdata to all pixels during one sub-frame, and the sustained period (orlighting period) is a period during which the EL element emits light.(FIG. 10)

Herein, the first sub-frame is called SF1, and the remaining sub-framesfrom the second to the eighth sub-frame are called SF2-SF8,respectively. The address period (Ta) is constant in SF1-SF8. On theother hand, the sustained periods (Ts) corresponding to SF1-SF8 arecalled Ts1-Ts8, respectively.

At this time, the sustained periods are arranged to beTs1:Ts2:Ts3:Ts4:Ts5:Ts6:Ts7:Ts8=1:½:¼:⅛: 1/16: 1/32: 1/64: 1/128.However, the order in which SF1-SF8 are caused to appear does notmatter. Desired gradation display among 256 gradations can be performedby combining the sustained periods.

First of all, in a state in which a voltage is not applied (or notselected) to an opposite electrode of an EL element of a pixel (notethat the opposite electrode is an electrode not connected to a TFT;normally, this is a cathode), a data signal is input to each pixelwithout light emission of the EL element. This period is defined as anaddress period. When the data is input to all the pixels and the addressperiod is completed, a voltage is applied (or selected) to the oppositeelectrode, thus allowing the EL element to emit light. This period isdefined as a sustained period. The period during which light is emitted(i.e., the pixel is lit) is any one of Ts1-Ts8. Let it be hereinsupposed that a predetermined pixel is lit during Ts8.

Thereafter, taking again an address period, a data signal is input toall pixels, and then a sustained period is entered. At this time, thesustained period is any one of Ts1-Ts7. Let it be herein supposed that apredetermined pixel is lit during Ts7.

Thereafter, the same operation is repeated for the remaining sixsub-frames, and, by setting the sequential sustained periods in theorder of Ts6, Ts5, . . . and Ts1, a predetermined pixel is lit in eachsub-frame.

When eight sub-frames appear, one frame is finished. At this time, thegradation of the pixel is controlled by multiplying the sustainedperiods. For example, when Ts1 and Ts2 are selected, a brightness of 75%can be expressed on the supposition that all the light is 100%, and,when Ts3, Ts5, and Ts8 are selected, a brightness of 16% can beexpressed.

256-gradation display was described above, but other gradation displaycan be performed.

When the gradation display (2^(n)-gradation display) of n bit (n is aninteger of two or more) is performed, one frame is first divided into nsub-frames (SF1, SF2, SF3, . . . SF(n−1), and SF(n)), whilecorresponding to the gradation of n bit. The number of divisions of oneframe increases as the gradation increases, and a driving circuit mustbe operated at a high frequency.

The n sub-frames are each divided into address periods (Ta) andsustained periods (Ts). In other words, the address and sustainedperiods are selected by selecting whether to apply a voltage to anopposite electrode common to all EL elements or not.

And, the sustained period corresponding to each of the n sub-frames isprocessed to be Ts1:Ts2:Ts3: . . . :Ts(n−1):Ts(n)=2⁰:2⁻¹:2⁻²: . . .:2^(−(n−2)):2^(−(n−1)) (herein, the sustained period corresponding toSF1, SF2, SF3, . . . , SF(n−1), and SF(n) is Ts1, Ts2, Ts3, . . . ,Ts(n−1), and Ts(n), respectively).

In this state, a pixel is sequentially selected in one arbitrary frame(more strictly, the switching TFT of each pixel is selected), and apredetermined gate voltage (corresponding to a data signal) is appliedto the gate electrode of the current controlling TFT. At this time, theEL element of a pixel to which the data signal actuating the currentcontrolling TFT is input emits light only during the sustained periodallocated to the sub-frame after completion of the address period. Thatis, a predetermined pixel emits light.

This operation is repeated in all the n sub-frames, and the gradation ofeach pixel is controlled by multiplying the sustained periods.Accordingly, when paying attention to an arbitrary pixel, the gradationof the pixel is controlled according to how long the pixel is lit ineach sub-frame (i.e., how long the sustained period has lasted).

As mentioned above, it is the most noticeable feature of the presentinvention that time-division gradation display is used for the activematrix type EL display device. In order to perform this time-divisiongradation, one frame must be divided into a plurality of sub-frames. Inother words, it is more necessary than before to improve the operatingfrequency of the driving circuits on the data signal side and on thegate signal side.

However, it is difficult to make a TFT capable of operating at such ahigh speed from the conventional polysilicon film (also called apolycrystal silicon film). The operation frequency can be decreased bydividing the driving circuit on the data signal side into a plurality ofcircuits, but a satisfactory result cannot be accomplished if so.

Therefore, in the present invention, use is made of a silicon filmhaving a peculiar crystal structure in which the continuity of a grainboundary is high and the crystal orientation is unidirectional. Thisfilm is used as an active layer of a TFT, thereby allowing the TFT toexhibit very high operation and speed. That is, it is one of thefeatures of the present invention to also perform the time-divisiongradation display of the active matrix type EL display device by the useof such a high operating speed TFT. A description is hereinafter givenof observed results of a silicon film used in the present invention thatwas made experimentally.

The silicon film used in the present invention has a crystal structurein which, microscopically, a plurality of needle-shaped crystals orbar-shaped crystals (hereinafter, designated as bar crystal) gather andform lines. This can be easily confirmed from observations according tothe TEM (transmission electron microscope).

Additionally, as a result of carrying out detailed observations of anelectron beam diffraction image of a spot diameter of about 1.35 μmconcerning the silicon film used in the present invention, diffractionspots corresponding to a {110} plane appear regularly in spite of theexistence of a slight fluctuation, and it can be confirmed to have the{1 1 0} plane as a main orientation plane though a crystallographic axishas a slight deviation.

FIG. 19(A) shows an electron beam diffraction image obtained byprojecting an electron beam of a spot diameter of about 1.35 μm onto thesilicon film used in the present invention. On the other hand, FIG.19(B) shows an electron beam diffraction image obtained by projecting anelectron beam onto the conventional polysilicon film under the sameconditions. In each figure, the center of the photograph is a position(projected point of the electron beam) onto which the electron beam wasprojected.

While the diffraction spots corresponding to the {1 1 0} plane appearcomparatively regularly in FIG. 19(A), they are arranged to be quiteirregular in FIG. 19(B), and thus the orientation planes are obviouslynonuniform. From this electron beam diffraction photograph, the siliconfilm used in the present invention can be immediately distinguished fromthe conventional polysilicon film.

In the electron beam diffraction image of FIG. 19(A), it is obvious, bycomparison with the electron beam diffraction image of a monocrystalsilicon wafer of the {1 1 0} orientation, that the diffraction spotcorresponding to the {1 1 0} plane appears. Additionally, while thediffraction spot of the monocrystal silicon wafer is seen as a sharpspot, the diffraction spot of the silicon film used in the presentinvention has an expanse on the concentric circle centering theprojected point of the electron beam.

This is also a feature of the silicon film used in the presentinvention. Since the {1 1 0} plane is an individual orientation planefor each crystal grain, it is expected that the same diffraction spot asthe monocrystal silicon is obtained as far as one crystal grain isconcerned. However, in practice, they exist as a collective of aplurality of crystal grains, and therefore each grain has a slightrotation around the crystallographic axis, and a plurality ofdiffraction points, each corresponding to the crystal grain appear onthe concentric circle, though each crystal grain sets the {1 1 0} planeas its own orientation plane. The points are laid upon each other so asto exhibit an expanse.

However, since an each individual crystal grain forms a grain boundaryquite excellent in consistency, as described later, the slight rotationaround the crystallographic axis does not constitute a factor forruining crystallinity. Therefore, it can be said that the electron beamdiffraction image of the silicon film used in the present inventionsubstantially has no distinction to the electron beam diffraction imageof the monocrystal silicon wafer of the {1 1 0} orientation.

From the foregoing, it may safely be affirmed that the silicon film usedas an active layer of a TFT in the present invention is the silicon filmshowing the electron beam diffraction image corresponding to the {1 1 0}orientation.

Now, a description will be given of the grain boundary of the siliconfilm used in the present invention. Although a description is givenunder the designation of “grain boundary” for convenience ofexplanation, this can be regarded as an interface between a certaincrystal grain and another crystal grain that has derived (or branched)therefrom. Anyway, the designation of “grain boundary” including themeaning of the aforementioned interface is used in this specification.

The present applicant confirmed that, from observation of a grainboundary formed by the contact of individual bar crystals under theHR-TEM (high-resolution transmission electron microscope), there iscontinuity in the crystal lattice in the grain boundary. This can beeasily confirmed from the fact that lattice fringes under observationare continuously linked to each other in the grain boundary.

The continuity of the crystal lattice in the grain boundary originatesfrom the fact that it is a grain boundary called “planar boundary”. Thedefinition of the planar boundary in this specification derives from“Planar Boundary” appearing in “Characterization of High-EfficiencyCast-Si Solar Cell Wafers by MBIC Measurement; Ryuichi Shimokawa andYutaka Hayashi, Japanese Journal of Applied Physics vol. 27, No. 5, pp.751-758, 1988.”

According to the above article, the planar boundary includes a twingrain boundary, a special lamination fault, and a special twist grainboundary. This planar boundary has a feature in that it is electricallyinert. That is, although it is a grain boundary since the planarboundary does not function as a trap to obstruct the movement of acarrier, it can in fact be considered as no existence.

Especially, when the crystallographic axis (axis perpendicular to thecrystal plane) is the <110> axis, the {211} twin grain boundary and the{111} twin grain boundary are often called a corresponding grainboundary of Σ3. A Σ value is a parameter serving as an indicator thatshows the level of the consistency of the corresponding grain boundary,and it is known that the grain boundary increases in excellence inconsistency as the Σ value falls.

As a result of observing the silicon film used in the present inventionby the TEM, almost all the grain boundaries have proved to becorresponding grain boundaries of Σ3. This was judged from the fact thata grain boundary formed between two crystal grains becomes thecorresponding grain boundary of Σ3 when θ=70.5° wherein θ is an angleformed by the lattice fringes corresponding to the {111} plane when theplane orientation of both crystal grains is {1 1 0}.

It is noted that it becomes the corresponding grain boundary of Σ9 whenθ=38.9°, and other grain boundaries, such as this grain boundary, alsoexist.

The crystal structure (more accurately, structure of the grain boundary)shows that two crystal grains different in the grain boundary areconnected to each other with quite excellently consistency. In otherwords, a structure is established in which crystal lattices rangecontinuously in the grain boundary, and it is very difficult to create atrap level resulting from, for example, a crystal fault Therefore, asemiconductor thin film that has a crystal structure such as the aboveone can in fact be considered to have no grain boundary.

It is confirmed by TEM observation that faults (stacking fault etc.)existing in the crystal grain disappear almost completely by conductinga heating process at 700-1150° C. in sequential steps when the siliconfilm used in the present invention is formed. This is apparent from thefact that the number of faults is greatly decreased before and after theheating process.

The difference in the number of faults appears as the difference in thespin density according to electron spin resonance analysis (ESRanalysis). In the current state, the spin density of the silicon filmused in the present invention has proved to be at least 5×10¹⁷ spins/cm³or less (preferably, 3×10¹⁷ spins/cm³ or less). However, since thismeasurement value is close to the detection limit of measuring devicesin existence, it is expected that an actual spin density is even lower.

A further detailed description of the silicon film used in the presentinvention can be supplied by Patent Application Nos. 044659 of 1998,152316 of 1998, 152308 of 1998, and 152305 of 1998, each filed by thepresent applicant.

A TFT in which the silicon film used in the present invention isexperimentally made an active layer shows an electrical characteristicthat equals MOSFET. The following data are obtained from the TFT (inwhich the film thickness of the active layer is 30 nm, and that of thegate insulating film is 100 nm) experimentally made by the presentapplicant.

(1) The sub-threshold coefficient which is the index of switchingperformance (quickness of on/off operation switch) is 60˜100 mV/decade(representatively, 60˜85 mV/decade) in both N-channel type TFT andP-channel type TFT: this value is small.

(2) The electron field-effect mobility (μ_(FE)) which is the index ofthe operation speed of the TFT is 200˜650 cm²/Vs (300˜500 cm²/Vsrepresentatively) in N-channel type TFT, and is 100˜300 cm²/Vs (150˜200cm²/Vs representatively) in P-channel type TFT: these values are large.

(3) The threshold voltage (V_(th)) which is the index of the drivingvoltage of the TFT is −0.5˜1.5 in N-channel type TFT, and is −1.5˜0.5 inP-channel type TFT: these values are small.

It is confirmed to be capable of realizing quite excellent switchingcharacteristics and high-speed operation properties, as described above.In addition, in a ring oscillator experimentally made by the use of theTFT, the oscillation frequency of about 1 GHz is obtained at themaximum. The ring oscillator is constructed as follows.

Number of steps: nine steps;

Film thickness of the gate insulating film of the TFT: 30 nm and 50 nm;

Gate length of the TFT (channel-length): 0.6 μm.

Additionally, as a result of actually making a shift registerexperimentally and confirming the operation frequency, the output pulseof the operation frequency of 100 MHz is obtained in the shift registerin which the film thickness of the gate insulating film is 30 nm, thegate length is 0.6 μm, the power supply voltage is 5V, and the number ofsteps is 50.

The marvelous data of the ring oscillator and the shift registermentioned above indicate that the TFT in which the silicon film used inthe present invention is made an active layer equals MOSFET, which usesa monocrystal silicon, or has operational performance surpassing MOSFET.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B show structures of an EL display device.

FIG. 2 shows a sectional structure of the EL display device.

FIG. 3 shows a structure of a pixel portion of a conventional EL displaydevice.

FIGS. 4A and 4B are views explaining TFT characteristics used in ananalog gradation method.

FIGS. 5A-5E show manufacturing steps of the EL display device.

FIGS. 6A-6D show manufacturing steps of the EL display device.

FIGS. 7A-7D show manufacturing steps of the EL display device.

FIGS. 8A-8C shows manufacturing steps of the EL display device.

FIG. 9 is an enlarged view of the pixel portion of the EL displaydevice.

FIG. 10 is a view explaining the operation mode of a time-divisiongradation method.

FIG. 11 shows an external appearance of an EL module.

FIGS. 12A and 12B show external appearances of the EL module.

FIGS. 13A-13C show manufacturing steps of a contact structure.

FIG. 14 shows a structure of the pixel portion of the EL display device.

FIG. 15 shows a sectional structure of the EL display device.

FIG. 16 shows an upper face structure of the pixel portion of the ELdisplay device.

FIG. 17 shows an upper face structure of the pixel portion of the ELdisplay device.

FIGS. 18A-18E show concrete examples of the electronic equipment.

FIGS. 19A and 19B are photographs substituted for a drawing, showing anelectron beam diffraction image of a polysilicon film.

FIGS. 20A and 20B are a photographs substituted for a drawing, showingan example of display images of the EL display device of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

First, the circuit structure of the active matrix type EL display deviceof the present invention is shown in FIG. 1(A). In the active matrixtype EL display device of FIG. 1(A), a pixel portion 101, a data signalside driving circuit 102, and a gate signal side driving circuit 103disposed around the pixel portion are formed by TFTs formed on asubstrate. Instead, the data side signal side driving circuit and thegate signal side driving circuit may be disposed, with the pixel portiontherebetween, in the form of a pair of circuits.

The data signal side driving circuit 102 basically includes a shiftregister 102 a, a latch (A) 102 b, and a latch (B) 102 c. Clock pulses(CK) and start pulses (SP) are input to the shift register 102 a,digital data signals are input to the latch (A) 102 b, and latch signalsare input to the latch (B) 102 c.

In the present invention, the data signal input to the pixel portion 101is a digital signal, and voltage gradation display is not performedalthough it is done in a liquid crystal display device. Thus, thedigital data signal that has information of 0” or “1” is input to thepixel portion 101 directly.

A plurality of pixels 104 are arranged in the pixel portion 101 like amatrix. An enlarged view of a pixel 104 is shown in FIG. 1(B). In FIG.1(B), reference numeral 105 is a switching TFT. This is connected to agate wiring line 106 for inputting gate signals, and a data wiring line107 (also called a source wiring line) for inputting data signals.

Reference numeral 108 is a current controlling TFT. The gate thereof isconnected to the drain of the switching TFT 105. The drain of thecurrent controlling TFT 108 is connected to an EL element 109, and thesource thereof is connected to a current-feed line 110. The EL element109 is made up of an anode (pixel electrode) connected to the currentcontrolling TFT 108 and a cathode (opposite electrode) facing the anode,with an EL layer between the anode and the cathode. The cathode isconnected to a given power line 111.

When the switching TFT 105 is in a non-selective state (off state), acapacitor 112 is provided to maintain a gate voltage of the currentcontrolling TFT 108. The capacitor 112 is connected to the drain of theswitching TFT 105 and to the current-feed line 110.

The digital data signal input to the pixel portion as mentioned above isgenerated by a time-division gradation data signal generation circuit113. The circuit 113 is to convert a video signal (including imageinformation) that is comprised of analog signals or digital signals intoa digital data signal for performing time-division gradation and, inaddition, to generate timing pulses, etc., required to performingtime-division gradation display.

Typically, the time-division gradation data signal generation circuit113 includes a means for dividing one frame into n sub-framescorresponding to the gradation of n bit (n is an integer of two ormore), a means for selecting an address period and a sustained period inthe n sub-frames, and a means for setting the sustained period to beTs1:Ts2:Ts3: . . . :Ts(n−1):Ts(n)=2⁰:2⁻¹:2⁻²: . . .:2^(−(n−2)):2^(−(n−1)).

The time-division gradation data signal generation circuit 113 can bedisposed outside the EL display device of the present invention. If so,digital data signals generated at that place are input to the EL displaydevice of the present invention. In this case, electronic equipment thathas the EL display device of the present invention as a display panelwill include the EL display device and the time-division gradation datasignal generation circuit of the present invention as differentconstituents.

Additionally, the time-division gradation data signal generation circuit113 can be mounted on the EL display device of the present invention inthe form of, for example, an IC chip. If so, digital data signalsgenerated in the IC chip are input to the EL display device of thepresent invention. In this case, electronic equipment that has the ELdisplay device of the present invention as a display panel will includethe EL display device of the present invention on which the IC chipincluding the time-division gradation data signal generation circuit ismounted as a constituent.

Finally, the time-division gradation data signal generation circuit 113can be constructed by TFTs disposed on the same substrate as the pixelportion 104, the data signal side driving circuit 102, and the gatesignal side driving circuit. If so, all can be processed on thesubstrate when video signals including image information are input tothe EL display device. In this case, it is preferable to construct thetime-division gradation data signal generation circuit by TFTs in which,as mentioned above, the silicon film used in the present invention ismade into an active layer, of course. Additionally, in this case,electronic equipment that has the EL display device of the presentinvention as a display panel is constructed such that the time-divisiongradation data signal generation circuit is built in the EL displaydevice itself. Thus, the electronic equipment can be made more compact.

Next, reference is made to FIG. 2 schematically showing the sectionalstructure of the active matrix type EL display device of the presentinvention.

In FIG. 2, reference numeral 11 is a substrate, and 12 is an insulatingfilm that is a base (hereinafter, this film is designated as base film).For the substrate 11, use can be made of a light transmissiblesubstrate, representatively, a glass substrate, a quartz substrate, aglass ceramic substrate, or a crystallization glass substrate. However,it must be resistible to the highest processing temperature in amanufacturing process.

The base film 12 is effective especially in using a substrate that has amovable ion or a substrate that has conductivity, but it is notnecessarily disposed on the quartz substrate. An insulating film thatcontains silicon can be used as the base film 12. It should be notedthat, in this specification, “insulating film that contains silicon”signifies an insulating film in which oxygen or nitrogen is added tosilicon at a predetermined ratio (SiOxNy: x and y are arbitraryintegers), such as a silicon oxide film, a silicon nitride film or asilicon nitride oxide film.

Reference numeral 201 is a switching TFT, and 202 is a currentcontrolling TFT. Both of them are formed by an n-channel type TFT. Sincethe electron field-effect mobility of the n-channel type TFT is largerthan that of the p-channel type TFT, the n-channel type TFT can work ata higher operation speed and allow a heavy-current to flow easily.Concerning the size of the TFT required when the same amount of currentis passed, the n-channel type TFT is smaller. Therefore, it is desirableto use the n-channel type TFT as the current controlling TFT because theeffective luminescence area of an image display panel is widened.

However, in the present invention, there is no need to limit theswitching TFT and the current controlling TFT to the n-channel type TFT.It is also possible to use the p-channel type TFT for both of them orany one thereof.

The switching TFT 201 is made up of an active layer that includes asource region 13, a drain region 14, LDD regions 15 a-15 d, an isolationregion 16, and channel formation regions 17 a, 17 b, a gate insulatingfilm 18, gate electrodes 19 a, 19 b, a 1st interlayer insulating film20, a source wiring line 21, and a drain wiring line 22. The gateinsulating film 18 or the 1st interlayer insulating film 20 can becommon to all TFTs on the substrate, or can be varied according tocircuits or elements.

In the switching TFT 201 shown in FIG. 2, the gate electrodes 19 a, 19 bare connected electrically, in other words, a so-called double gatestructure is established. Not only the double gate structure but also aso-called multi gate structure, such as a triple gate structure, can beestablished, of course. The multi gate structure signifies a structureincluding an active layer that has two channel formation regions or moreconnected in series.

The multi gate structure is very effective to decrease an OFF-statecurrent, and if the OFF-state current of the switching TFT is decreasedsufficiently, the capacity necessary for the capacitor 112 shown in FIG.1(B) can be reduced. That is, since the possession area of the capacitor112 can be reduced, the multi gate structure is also effective to widenthe effective luminescence area of the EL element 109.

In the switching TFT 201, the LDD regions 15 a-15 d are disposed not tooverlap with the gate electrodes 19 a and 19 b, with the gate insulatingfilm 18 therebetween. The thus built structure is very effective todecrease the OFF-state current The length (width) of the LDD regions 15a-15 d is 0.5-3.5 μm, representatively, 2.0-2.5 μm.

It is more desirable to form an offset region (i.e., region formed witha semiconductor layer whose composition is the same as the channelformation region, and in which a gate voltage is not applied) betweenthe channel formation region and the LDD region, in order to decreasethe OFF-state current. In the multi gate structure that has two gateelectrodes or more, the isolation region 16 (i.e., region whoseconcentration is the same and to which the same impurity element isadded as the source region or the drain region) formed between thechannel formation regions is effective to decrease the OFF-statecurrent.

The current controlling TFT 202 is made up of an active layer thatincludes a source region 26, a drain region 27, an LDD region 28, and achannel formation region 29, a gate insulating film 18, a gate electrode30, the 1st interlayer insulating film 20, a source wiring line 31, anda drain wiring line 32. The gate electrode 30 can be a multi gatestructure instead of the single gate structure.

The drain of the switching TFT is connected to the gate of the currentcontrolling TFT, as shown in FIG. 1(B). In more detail, the gateelectrode 30 of the current controlling TFT 202 is connectedelectrically to the drain region 14 of the switching TFT 201 through thedrain wiring line 22 (also called connection wiring line). The sourcewiring line 31 is connected to the current-feed line 110 of FIG. 1(B).

The current controlling TFT 202 is an element to control the amount ofcurrent supplied to the EL element, and a comparatively large amount ofcurrent can flow therethrough. Therefore, preferably, the channel-width(W) is designed to be greater than the channel-width of the switchingTFT. Additionally, preferably, the channel-length (L) is designed to belong so that an excessive current does not flow through the currentcontrolling TFT 202. A desirable value is 0.5-2 μA (1-1.5 μA preferably)per pixel.

From the foregoing, preferably, W1 is 0.1-5 μm (1-3 μmrepresentatively), W2 is 0.5-30 μm (2-10 μm representatively), L1 is0.2-18 μm (2-15 μm representatively), and L2 is 0.1-50 μm (1-20 μmrepresentatively), wherein L1 is the channel-length of the switching TFT(L1=L1 a+L1 b), W1 is the channel-width thereof, L2 is thechannel-length of the current controlling TFT, and W2 is thechannel-width thereof, as shown in FIG. 9.

The EL display device shown in FIG. 2 also has a feature in that, in thecurrent controlling TFT 202, the LDD region 28 is formed between thedrain region 27 and the channel formation region 29, and, in addition,the LDD region 28 has a region overlapping with the gate electrode 30and a region not overlapping therewith, with the gate insulating film 18between the LDD region 28 and the gate electrode 30.

The current controlling TFT 202 passes a relatively large amount ofcurrent so that the EL element 203 emits light, and it is desirable todevise a countermeasure for deterioration caused by injection of a hotcarrier. The current controlling TFT 202 is kept in an off state when ablack color is displayed. In that situation, a attractive black colorcannot be displayed if the OFF-state current is high, and a fall incontrast, for example, is brought about. Therefore, it is necessary tosuppress the OFF-state current also.

Concerning the deterioration by the injection of the hot carrier, it isknown that the structure in which the LDD region overlaps with the gateelectrode is very effective. However, since the OFF-state currentincreases if the whole of the LDD region is caused to coincidetherewith, the present applicant has solved the problem ofcountermeasures against both the hot carrier and the OFF-state currentat the same time by providing a new structure in which the LDD regionthat is not coincident with the gate electrode is disposed in series, inaddition to the aforementioned structure.

At this time, the length of the LDD region that overlaps with the gateelectrode is designed to be 0.1-3 μm (0.3-1.5 μm preferably). Theparasitic capacitance will be enlarged if it is too long, and the effectto prevent the hot carrier will be weakened if it is too short. Thelength of the LDD region that does not overlap with the gate electrodeis designed to be 1.0-3.5 μm (1.5-2.0 μm preferably). A sufficientcurrent cannot be passed if it is too long, and the effect to decreasethe OFF-state current will be weakened if it is too short.

Since the parasitic capacitance is formed in the region where the gateelectrode and the LDD region overlap with each other in the abovestructure, it is desirable to not dispose it between the source region26 and the channel formation region 29. All that is required is todispose the LDD region only on the drain region side because the flowingdirection of the carrier (herein, electrons) in the current controllingTFT is always the same.

From the viewpoint of increasing the amount of current to be passed, itis also effective to thicken the film thickness of the active layer(specifically, the channel formation region) of the current controllingTFT 202 (50-100 nm preferably, and 60-80 nm further preferably). On theother hand, from the viewpoint of decreasing the OFF-state current inthe switching TFT 201, it is also effective to thin the film thicknessof the active layer (specifically, the channel formation region)(20-50nm preferably, and 25-40 nm further preferably).

The structure of the TFT formed in the pixel was described above. Inthis formation, a driving circuit is also formed at the same time. ACMOS circuit that is a base unit to form the driving circuit is shown inFIG. 2.

In FIG. 2, a TFT that has a structure to decrease the hot carrierinjection without reducing the operation speed to the utmost is used asthe n-channel type TFT 204 of the CMOS circuit. The driving circuitdescribed herein is the data signal side driving circuit 102 and thegate signal side driving circuit 103, each shown in FIG. 1. It is alsopossible to form other logic circuits (level shifter, A/D converter,signal division circuit, etc.), of course.

The active layer of the n-channel type TFT 204 includes a source region35, a drain region 36, an LDD region 37, and a channel formation region38. The LDD region 37 overlaps with the gate electrode 39, with the gateinsulating film 18 therebetween.

The reason for forming the LDD region only on the drain region side isnot to reduce the operation speed. There is no need to worry about theOFF-state current value in the n-channel type TFT 204. Instead, theoperation speed should be rated above it. Therefore, preferably, the LDDregion 37 is completely laid on the gate electrode, thus reducing aresistance component as much as possible. That is, a so-called offsetshould be omitted.

In the p-channel type TFT 205 of the CMOS circuit, there is no need toprovide the LDD region especially because the deterioration caused bythe hot carrier injection is quite negligible. Therefore, the activelayer includes a source region 40, a drain region 41, and a channelformation region 42. The gate insulating film 18 and the gate electrode43 are disposed thereon. It is also possible to dispose the LDD regionas well as the n-channel type TFT 204 in order to take countermeasuresagainst the hot carrier, of course.

When a p-channel type TFT is used as the current controlling TFT 202, itcan have the same structure as the p-channel type TFT 205.

The n-channel type TFT 204 and the p-channel type TFT 205 are coveredwith the first interlayer insulating film 20, and the source wiringlines 44, 45 are formed. The two are connected electrically by the drainwiring line 46.

Reference numeral 47 is a first passivation film. The film thicknessthereof is 10 nm-1 μm (200-500 nm preferably). An insulating filmincluding silicon (especially, a silicon nitride oxide film or a siliconnitride film is desirable) can be used as its material. The passivationfilm 47 serves to protect a formed TFT from alkali metal and water. TheEL layer finally disposed above the TFT includes alkali metal such assodium. In other words, the first passivation film 47 serves also as aprotective layer by which the alkali metal (movable ions) is not allowedto enter the TFT side.

Reference numeral 48 is a second interlayer insulating film, and servesas a flattening film to flatten level differences formed by the TFT.Preferably, an organic resin film, such as polyimide, polyamide, acrylicresin, or BCB (benzocyclobutene) is used as the second interlayerinsulating film 48. These films have an advantage in that a good smoothplane can be easily formed, and the dielectric constant is low. It ispreferable to entirely absorb the level difference caused by the TFT bymeans of the second interlayer insulating film because the EL layer isvery sensitive to ruggedness. Additionally, it is preferable to form alow-dielectric constant material thick, in order to decrease theparasitic capacitance formed between the gate wiring line or the datawiring line and the cathode of the EL element. Therefore, preferably,the film thickness thereof is 0.5-5 μm (1.5-2.5 μm preferably).

Reference numeral 49 is a pixel electrode (anode of the EL element) thatis made of a transparent conductive film. After a contact hole (opening)is made in the second interlayer insulating film 48 and the firstpassivation film 47, the electrode is connected to the drain wiring line32 of the current controlling TFT 202 through the opening. When thepixel electrode 49 and the drain region 27 are arranged not to beconnected directly, as in FIG. 2, the alkali metal of the EL layer canbe prevented from entering the active layer via the pixel electrode.

A third interlayer insulating film 50 whose thickness is 0.3-1 μm isdisposed on the pixel electrode 49. The film 50 is made of a siliconoxide film, a silicon nitride oxide film, or an organic resin film. Thethird interlayer insulating film 50 is provided with an opening on thepixel electrode 49 by etching, and the edge of the opening is etched tohave a taper shape. Preferably, the angle of the taper is 10-60° (30-50°preferably).

An EL layer 51 is formed on the third interlayer insulating film 50. TheEL layer 51 is used in the form of a single-layer structure or a layeredstructure. The layered structure is superior in luminous efficiency.Generally, a positive hole injection layer/a positive hole transportinglayer/a luminescent layer/an electronic transporting layer are formed onthe pixel electrode in this order. Instead, a structure may be usedwhich has the order of positive hole transporting layer/luminescentlayer/electronic transporting layer or the order of positive holeinjection layer/positive hole transporting layer/luminescentlayer/electronic transporting layer/electronic injection layer. In thepresent invention, any one of the known structures can be used, andfluorescent coloring matter, etc., can be doped to the EL layer.

For example, materials indicated in the following U.S. patents orpublications can be used as the organic EL material; U.S. Pat. Nos.4,356,429: 4,539,507: 4,720,432: 4,769,292: 4,885,211: 4,950,950:5,059,861: 5,047,687: 5,073,446: 5,059,862: 5,061,617: 5,151,629:5,294,869: 5,294,870, and Japanese Laid-Open Patent Publication Nos.189525 of 1998: 241048 of 1996: 78159 of 1996, and PhotochemicalProcesses in Organized Molecular Systems pp. 437-450“Electroluminescence in Organic Thin Films”, Tetsuo Tsutsui et al.

The EL display device mainly has four color display methods; method offorming three kinds of EL elements that correspond to R (red), G(green), and B (blue), respectively: method of combining an EL elementof white luminescence and a color filter (coloring layer): method ofcombining an EL element of blue or blue-green luminescence and afluorescent body (fluorescent color conversion layer: CCM): and methodof stacking the EL elements that correspond to RGB while using atransparent electrode for a cathode (opposite electrode).

The structure of FIG. 2 is an example in which the method of formingthree kinds of EL elements that correspond to RGB is used. Only onepixel is shown in FIG. 2. In fact, pixels, each having the samestructure, are formed to correspond to each color of red, green, andblue, and thereby color display can be performed.

The present invention can be performed regardless of the luminescencemethod, and can use all the four methods. However, since the speed ofresponse of the fluorescent body is slower than that of the EL, and theproblem of afterglow occurs, the method in which the fluorescent body isnot used is preferable. Additionally, it can be said that a color filterthat causes the fall of luminescence brightness should not be used ifpossible.

A cathode 52 of the EL element is disposed on the EL layer 51. Amaterial that includes magnesium (Mg), lithium (Li) or calcium (Ca) thatis small in work function is used as the cathode 52. Preferably, use ismade of an electrode made of MgAg (material in which Mg and Ag are mixedin the ratio of Mg:Ag=10:1). Instead a MgAgAl electrode, a LiAlelectrode, or LiFAl electrode can be used.

It is preferable to form the cathode 52 continuously without airexposure after the EL layer 51 is former. The reason is that aninterface state between the cathode 52 and the EL layer 51 greatlyinfluences the luminous efficiency of the EL element. In thisspecification, the luminescence element formed by the pixel electrode(anode), the EL layer, and the cathode is called an EL element.

It is necessary to form a layered body comprised of the EL layer 51 andthe cathode 52 by each pixel individually. However, the EL layer 51 isquite weak to water, and a normal photolithography technique cannot beused. Therefore, it is preferable to use a physical mask material, suchas metal mask, and selectively form it according to a vapor phasemethod, such as a vacuum deposition method, a sputtering method, or aplasma CVD method.

It is also possible to use an ink jet method, a screen printing method,and the like, as the method of selectively forming the EL layer.However, these methods cannot continuously form the cathode in thecurrent state of the art, and it can be said that the method describedabove, not the ink jet method, etc., is desirable.

Reference numeral 53 is a protective electrode. This is to protect thecathode 52 from outside water, etc., and, at the same time, connect thecathode 52 of each pixel. For the protective electrode 53, it ispreferable to use a low-resistance material including aluminum (Al),copper (Cu), or silver (Ag). A cooling effect to lower the heat of theEL layer can be expected from the protective electrode 53. It is alsoeffective to continue to the protective electrode 53 without airexposure after the EL layer 51 and the cathode 52 are formed.

Reference numeral 54 is a second passivation film, and, preferably, thefilm thickness thereof is 10 nm-1 μm (200-500 nm preferably). A mainpurpose to dispose the second passivation film 54 is to protect the ELlayer 51 from water. It is also effective to give it a cooling effect.However, the EL layer is weak to heat as mentioned above, and filmformation should be performed at a low temperature (ranging from a roomtemperature to 120° C. preferably). Therefore, it can be said that adesirable film formation method is the plasma CVD method, sputteringmethod, vacuum deposition method, ion plating method, or solutionapplication method (spin coating method).

Needless to say, all the TFTs shown in FIG. 2 have the silicon filmsused in the present invention as active layers.

One of the purports of the present invention is to form TFTs that show ahigh operation speed by using a silicon film that has a peculiar crystalstructure in which the continuity of the grain boundary is high as anactive layer of the TFT and the crystal orientation is uniform, and,accordingly, perform time-division gradation display of an active matrixtype EL display device integral with a driving circuit. Therefore, thepresent invention is not limited to the structure of the EL displaydevice of FIG. 2, which is just one of the preferred embodiments.

The TFT that uses the silicon film used in the present invention canshow a high operation speed, and is therefore apt to undergodeterioration caused by, for example, hot carrier injection. Therefore,as shown in FIG. 2, it is very effective to form TFTs (a switching TFTlow sufficiently in OFF-state current and a current controlling TFTstrong in hot carrier injection) having different structures accordingto a function in pixels, in order to manufacture an EL display devicethat has high reliability and can perform excellent image display (i.e.,can show high operational performance).

Embodiment 1

An embodiment of the present invention will be described with referenceto FIGS. 5 to 8. A description is here given of a method ofsimultaneously manufacturing TFTs of a pixel portion and a drivingcircuit portion around the pixel portion. Concerning the drivingcircuit, a CMOS circuit that is a base unit is shown in the figure, fora brief description.

First, a substrate 501 in which a base film (not shown) is disposed onthe surface thereof is prepared as shown in FIG. 5(A). In thisembodiment, a silicon nitride oxide film whose thickness is 200 nm andanother silicon nitride oxide film whose thickness is 100 nm arelaminated and are used as a base film on a crystallization glass. Atthis time, preferably, the concentration of nitrogen of the filmcontacting the crystallization glass substrate is kept to 10-25 wt %. Itis possible to form an element directly on the quartz substrate withoutany base film, of course.

Thereafter, an amorphous silicon film 502 whose thickness is 45 nm isformed on the substrate 501 by a well-known film formation method. Thereis no need to limit it to the amorphous silicon film. Instead, asemiconductor film (including a microcrystal semiconductor film) thathas an amorphous structure can be used in this embodiment. A compoundsemiconductor film that has an amorphous structure, such as an amorphoussilicon germanium film, also can be used herein.

Concerning the steps from here to FIG. 5(C), it is possible tocompletely cite Japanese Laid-open Patent Publication No. 247735 of 1998filed by the present applicant. This publication discloses a techniqueconcerning a method of crystallizing a semiconductor film, which uses anelement, such as Ni, as a catalyst.

First, a protective film 504 that has openings 503 a and 503 b isformed. A silicon oxide film 150 nm thick is used in this embodiment. Alayer 505 that contains nickel (Ni) is formed on the protective film 504by a spin court method. Concerning the formation of the Ni containinglayer, reference can be made to the above publication.

Thereafter, as shown in FIG. 5(B), heating processing at 570° C. for 14hours is performed in an inert atmosphere, and the amorphous siliconfilm 502 is crystallized. At this time, crystallization progressessubstantially in parallel with the substrate, starting from regions 506a and 506 b (hereinafter, designated as Ni addition region) with whichNi is in contact. As a result, a polysilicon film 507 is formed that hasa crystal structure in which bar crystals gather and form lines. It isknown that diffraction spots corresponding to the {110} orientation asshown in FIG. 19(A) are observed in an electron beam diffractionphotograph at this stage.

Thereafter, as shown in FIG. 5(C), an element (phosphorus preferably)that belongs to 15-family is added to the Ni addition regions 506 a and506 b, while leaving the protective film 504 as a mask. Regions 508 aand 508 b (hereinafter, designated as phosphorus addition region) towhich phosphorus was added at high concentration are thus formed.

Thereafter, heat processing at 600° C. for 12 hours is performed in aninert atmosphere as shown in FIG. 5(C). Ni existing in the polysiliconfilm 507 is moved by this heat processing, and almost all of them arefinally captured by the phosphorus addition regions 508 a and 508 b asshown by the arrow. It is thought that this is a phenomenon caused bythe gettering effect of a metallic element (Ni in this embodiment) byphosphorus.

By this process, the concentration of Ni remaining in the polysiliconfilm 509 is reduced to at least 2×10¹⁷ atoms/cm³ according to themeasurement value by SIMS (mass secondary ion analysis). Although Ni isa lifetime killer for a semiconductor, no adverse influence is given tothe TFT characteristic when it is decreased to this extent.Additionally, since this concentration is the measurement limit of theSIMS analysis in the current state of the art, it will show an evenlower concentration (less than 2×10¹⁷ atoms/cm³) in practice.

The polysilicon film 509 can be thus obtained that is crystallized by acatalyst and is decreased to the level in which the catalyst does notobstruct the operation of a TFT. Thereafter, active layers 510-513 thatuse the polysilicon film 509 only are formed by a patterning process. Atthis time, a marker to conduct mask alignment in the followingpatterning should be formed by using the above polysilicon film. (FIG.5(D))

Thereafter, a silicon nitride oxide film 50 nm thick is formed by theplasma CVD method as shown in FIG. 5(E), heating processing at 950° C.for 1 hour is then performed in an oxidation atmosphere, and a thermaloxidation process is performed. The oxidation atmosphere can be anoxygen atmosphere or another oxygen atmosphere in which halogen isadded.

In this thermal oxidation process, the oxidation progresses in theinterface between the active layer and the silicon nitride oxide filmand a polysilicon film whose thickness is about 15 nm is oxidized, sothat a silicon oxide film whose thickness is about 30 nm is formed. Thatis, a gate insulating film 514 of a thickness of 80 nm is formed inwhich the silicon oxide film 30 nm thick and the silicon nitride oxidefilm 50 nm thick are laminated. The film thickness of the active layers510-513 is made 30 nm by the thermal oxidation process.

Thereafter, as shown in FIG. 6(A), a resist mask 515 is formed, and animpurity element (hereinafter, designated as p-type impurity element)that gives the p-type through the medium of the gate insulating film 514is added. As the p-type impurity element, an element that belongs to13-family representatively, boron or gallium typically, can be used.This (called a channel dope process) is a process for controlling thethreshold voltage of a TFT.

In this embodiment, boron is added by the ion dope method in whichplasma excitation is performed without the mass separation of diborane(B₂H₆). The ion implantation method that performs the mass separationcan be used, of course. According to this process, impurity regions516-518 are formed that include boron at the concentration of1×10¹⁵-1×10¹⁸ atoms/cm³ (5×10¹⁹-5×10¹⁷ atoms/cm³ representatively).

Thereafter, resist masks 519 a and 519 b are formed as shown in FIG.6(B), and an impurity element (hereinafter, designated as n-typeimpurity element) that gives the n-type through the medium of the gateinsulating film 514 is added. As the n-type impurity element, an elementthat belongs to 15-family representatively, phosphorus or arsenictypically, can be used. In this embodiment, a plasma doping method inwhich plasma excitation is performed without the mass separation ofphosphine (PH₃) is used. Phosphorus is added in the concentration of1×10¹⁸ atoms/cm³. The ion implantation method that performs massseparation can be used, of course.

A dose amount is adjusted so that the n-type impurity element isincluded in the n-type impurity regions 520, 521 formed by this processat the concentration of 2×10¹⁶-5×10¹⁹ atoms/cm³ (5×10¹⁷-5×10¹⁸ atoms/cm³representatively).

Thereafter, a process is performed for activating the added n-typeimpurity element and the added p-type impurity element as shown in FIG.6(C). There is no need to limit the activation means, but, since thegate insulating film 514 is disposed, the furnace annealing process thatuses an electrothermal furnace is desirable. Additionally, it ispreferable to perform heat processing at a temperature as high aspossible because there is a possibility of having damaged the interfacebetween the active layer and the gate insulating film of a part that isa channel formation region in the process of FIG. 6(A).

Since the crystallization glass with high heat resistance is used inthis embodiment, the activating process is performed by the furnaceannealing processing at 800° C. for 1 hour. The thermal oxidation can beperformed keeping a processing atmosphere in an oxidizing atmosphere, orthe heat processing can be performed in an inert atmosphere. However,the activating process is not indispensable.

This process clarifies the edge of the n-type impurity regions 520, 521,namely, the boundary (junction) between the n-type impurity regions 520,521 and the region (p-type impurity region formed by the process of FIG.6(A)) around the n-type impurity regions 520, 521, where the n-typeimpurity element is not added. This means that the LDD region and thechannel formation region can form an excellent junction when a TFT islater completed.

Thereafter, a conductive film 200-400 nm thick is formed, and patterningis performed, so that gate electrodes 522-525 are formed. The gateelectrode can be made of a conductive film of a single-layer, however,preferably, a lamination film, such as two-layer or three-layer film, isused when necessary. A known conductive film can be used as the materialof the gate electrode.

Specifically, use can be made of a film of an element selected from thegroup consisting of tantalum (Ta), titanium (Ti), molybdenum (Mo),tungsten (W), chrome (Cr), and silicon (Si) having conductivity, a filmof a nitride of the aforementioned elements (tantalum nitride film,tungsten nitride film, or titanium nitride film representatively); analloy film of a combination of the aforementioned elements (Mo—W alloyor Mo—Ta alloy representatively); or, a silicide film of theaforementioned elements (tungsten silicide film or titanium silicidefilm representatively). They can have a single-layer structure or alamination-layer structure, of course.

In this embodiment, a lamination film is used that is made of a tungstennitride (WN) film 50 nm thick and a tungsten (W) film 350 nm thick. Thiscan be formed by the sputtering method. By adding an inert gas, such asXe or Ne, as a spattering gas, the film can be prevented from peelingoff because of stress.

At this time, the gate electrodes 523, 525 are formed to overlap withpart of the n-type impurity regions 520, 521, respectively, with thegate insulating film 514 therebetween. The overlapping part is latermade an LDD region overlapping with the gate electrode. According to thesectional view of the figure, the gate electrodes 524 a and 524 b areseen as separate, in fact, they are connected electrically to eachother.

Thereafter, with the gate electrodes 522-525 as masks, an n-typeimpurity element (phosphorus in this embodiment) is addedself-adjustably, as shown in FIG. 7(A). At this time, an adjustment isperformed so that phosphorus is added to the thus formed impurityregions 526-532 at the concentration of ½- 1/10 (⅓-¼ representatively)of that of the n-type impurity regions 520, 521. Preferably, theconcentration is 1×10¹⁶-5×10¹⁸ atoms/cm³ (3×10¹⁷-3×10¹⁸ atoms/cm³typically).

Thereafter, as shown in FIG. 7(B), resist masks 533 a-533 d are formedto cover the gate electrode, an n-type impurity element (phosphorus inthis embodiment) is then added, and impurity regions 534-540 including ahigh concentration of phosphorus are formed. The ion dope method usingphosphine (PH₃) is applied also herein, and an adjustment is performedso that the concentration of phosphorus in these regions is1×10²⁰-1×10²¹ atoms/cm³ (2×10²⁰-5×10²⁰ atoms/cm³ representatively).

A source region or a drain region of the n-channel type TFT is formedthrough this process, and the switching TFT leaves a part of the n-typeimpurity regions 529-531 formed in the process of FIG. 7(A). The leftregion corresponds to the LDD regions 15 a-15 d of the switching TFT ofFIG. 2.

Thereafter, as shown in FIG. 7(C), the resist masks 533 a-533 d areremoved, and a resist mask 541 is newly formed. A p-type impurityelement (boron in this embodiment) is then added, and impurity regions542, 543 including a high concentration of boron are formed. Herein,according to the ion dope method using diborane (B₂H₆), boron is addedto obtain a concentration of 3×10²⁰-3×10²¹ atoms/cm³ (5×10²⁰-1×10²¹atoms/cm³ representatively).

Phosphorus has been already added to the impurity regions 542, 543 at aconcentration of 1×10²⁰-1×10²¹ atoms/cm³. Boron added herein has atleast three times as high concentration as the added phosphorus.Therefore, the impurity region of the n-type formed beforehand iscompletely changed into that of the p-type, and functions as an impurityregion of the p-type.

Thereafter, as shown in FIG. 7(D), the resist mask 541 is removed, andthen a first interlayer insulating film 544 is formed. As the firstinterlayer insulating film 544, an insulating film that includes siliconis used in the form of a single-layer structure or a stacked-layerstructure as a combination thereof. Preferably, the film thicknessthereof is 400 nm-1.5 μm. In this embodiment, a structure is created inwhich an 800 nm-thick silicon oxide film is stacked on a 200 nm-thicksilicon nitride oxide film.

Thereafter, the n-type or p-type impurity element added at eachconcentration is activated. The furnace annealing method is desirable asan activation means. In this embodiment, heat treatment is performed at550° C. for 4 hours in a nitrogen atmosphere in an electrothermalfurnace.

Heat treatment is further performed at 300-450° C. for 1-12 hours in anatmosphere that includes hydrogen of 3-100% for hydrogenation. This is aprocess to hydrogen-terminate an unpaired connector of a semiconductorfilm by thermally excited hydrogen. As another means for hydrogenation,plasma hydrogenation (hydrogen excited by plasma is used) can beperformed.

Hydrogenation can be performed during the formation of the firstinterlayer insulating film 544. In more detail, the 200 nm-thick siliconnitride oxide film is formed, and hydrogenation is performed asmentioned above, and thereafter the remaining 800 nm-thick silicon oxidefilm can be formed.

Thereafter, as shown in FIG. 8(A), contact holes are made in the firstinterlayer insulating film 544, and source wiring lines 545-548 anddrain wiring lines 549-551 are formed. In this embodiment, thiselectrode is formed with a lamination film of a three-layer structure inwhich a 100 nm-thick Ti film, a 300 nm-thick aluminum film that includesTi, and a 150 nm-thick Ti film are continuously formed according to thesputtering method. Other conductive films can be used, of course.

Thereafter, a first passivation film 552 is formed to be 50-500 nm thick(200-300 nm thick representatively). In this embodiment, a 300 nm-thicksilicon nitride oxide film is used as the first passivation film 552. Asilicon nitride film can be substituted for this.

At this time, it is effective to perform plasma treatment by the use ofgas that includes hydrogen, such as H₂ or NH₃, prior to the formation ofthe silicon nitride oxide film. Hydrogen excited by this preprocess issupplied to the first interlayer insulating film 544, and, through heattreatment, the film quality of the first passivation film 552 isimproved. At the same time, since hydrogen that is added to the firstinterlayer insulating film 544 diffuses onto the lower side, the activelayer can be effectively hydrogenated.

Thereafter, as shown in FIG. 8(B), a second interlayer insulating film553 made of organic resin is formed. Polyimide, acrylic fiber, or BCB(benzocyclobutene) can be used as the organic resin. Especially, sincethe second interlayer insulating film 553 is required to flatten thelevel differences formed by TFTs, an acrylic film excellent insmoothness is desirable. An acrylic film is formed to be 2.5 μm thick inthis embodiment.

Thereafter, contact holes that reach the drain wiring line 551 are madein the second interlayer insulating film 553 and the first passivationfilm 552, and a pixel electrode 554 (anode) is formed. In thisembodiment, an indium oxide/tin (ITO) film is formed to be 110 nm thick,and it is made a pixel electrode by patterning. A transparent conductivefilm can be used in which zinc oxide (ZnO) of 2-20% is mixed with indiumoxide. This pixel electrode functions as the anode of the EL element.

Thereafter, an insulating film (a silicon oxide film in this embodiment)that includes silicon is formed to be 500 nm thick, an opening is thenformed at the position corresponding to the pixel electrode 554, and athird interlayer insulating film 555 is formed. It is possible to easilyform a tapered sidewall by using the wet etching method when the openingis formed. If the sidewall of the opening does not have a sufficientlygentle slope, deterioration of the EL layer caused by level differenceswill lead to an important problem.

Thereafter, an EL layer 556 and a cathode (MgAg electrode) 557 arecontinuously formed without air exposure by the vacuum depositionmethod. Preferably, the film thickness of the EL layer 556 is 800-200 nm(100-200 nm typically), and that of the cathode 557 is 180-300 nm(200-250 nm typically).

In this process, an EL layer and a cathode are sequentially formed for apixel corresponding to red, a pixel corresponding to green, and a pixelcorresponding to blue. However, since the EL layer is poor in toleranceto solutions, they must be independently formed for each color withoutusing the photolithography technique. Thus, it is preferable to concealpixels except a desired one by the use of the metal mask, andselectively form an EL layer and a cathode for the desired pixel.

In detail, a mask is first set for concealing all pixels except a pixelcorresponding to red, and an EL layer and a cathode of red luminescenceare selectively formed by the mask. Thereafter, a mask is set forconcealing all pixels except a pixel corresponding to green, and an ELlayer and a cathode of green luminescence are selectively formed by themask. Thereafter, as above, a mask is set for concealing all pixelsexcept a pixel corresponding to blue, and an EL layer and a cathode ofblue luminescence are selectively formed by the mask. In this case, thedifferent masks are used for the respective colors. Instead, the samemask may be used for them. Preferably, processing is performed withoutbreaking the vacuum until the EL layer and the cathode are formed forall the pixels.

A known material can be used for the EL layer 556. Preferably, that isan organic material in consideration of driving voltage. For example,the EL layer can be formed with a four-layer structure consisting of apositive hole injection layer, a positive hole transporting layer, aluminescent layer, and an electronic injection layer. The MgAg electrodeis used as the cathode of the EL element in this embodiment. Known othermaterials can be used instead of it.

As the protective electrode 558, a conductive film largely composed ofaluminum can be used. The protective electrode 558 can be formedaccording to the vacuum deposition method by using a mask different fromthe mask when the EL layer and the cathode are formed Preferably, it iscontinuously formed without air exposure after the EL layer and thecathode are formed.

At the final stage, a second passivation film 559 made of a siliconnitride film is formed to be 300 nm thick. In practice, the protectiveelectrode 558 functions to protect the EL layer from, for example,water. In addition, the reliability of the EL element can be furtherimproved by forming the second passivation film 559.

An active matrix type EL display device constructed as shown in FIG.8(C) is completed. In practice, preferably, the device is packaged(sealed) by a highly airtight protective film (laminate film,ultraviolet cured resin film, etc.) or a housing material such as aceramic sealing can, in order not to be exposed to the air whencompleted as shown in FIG. 8(C). In that situation, the reliability(life) of the EL layer is improved by making the inside of the housingmaterial an inert atmosphere or by placing a hygroscopic material (forexample, barium oxide) therein.

After airtightness is improved by, for example, packaging, a connector(flexible print circuit: FPC) for connecting a terminal drawn from theelement or circuit formed on the substrate to an external signalterminal is attached, and a product is completed. In this specification,the EL display device, thus wholly prepared for market, is called ELmodule.

Now, the structure of the active matrix type EL display device of thisembodiment will be described with reference to the perspective view ofFIG. 11. The active matrix type EL display device of this embodiment ismade up of a pixel portion 602, a gate signal side driving circuit 603,and a data signal side driving circuit 604, each formed on a glasssubstrate 601. A switching TFT 605 of the pixel portion is an n-channeltype TFT, and is disposed at the intersection of a gate wiring line 606connected to the gate signal side driving circuit 603 and a sourcewiring line 607 connected to the data signal side driving circuit 604.The drain of the switching TFT 605 is connected to the gate of a currentcontrolling TFT 608.

The source of the current controlling TFT 608 is connected to acurrent-feed line 609, and the drain of the current controlling TFT 608is connected to an EL element 610. A predetermined voltage is applied tothe cathode of the EL element 610.

A FPC 611 which is an external input-output terminal is provided withinput wiring lines (connection wiring lines) 612, 613 for transmitting asignal to the driving circuit, and an input wiring line 614 connected tothe current-feed line 609.

The EL module of this embodiment including housing materials will now bedescribed with reference to FIGS. 12(A) and 12(B). Reference charactersused in FIG. 11 are again used when necessary.

A pixel portion 1201, a data signal side driving circuit 1202, and agate signal side driving circuit 1203 are formed on a substrate 1200.Various wiring lines from each driving circuit are connected to externalequipment via the input wiring lines 612-614 and the FPC 611.

At this time, a housing material 1204 is disposed so as to enclose atleast the pixel portion, preferably the pixel portion and the drivingcircuit. The housing material 1204 is shaped to have a concave portionwhose internal dimension is larger than the external dimension of the ELelement, or is shaped like a sheet. The housing material 1204 is fixedto the substrate 1200 by an adhesive 1205 so as to form closed space incooperation with the substrate 1200. At this time, the EL element is ina state of being completely enclosed in the closed space, and iscompletely intercepted from the outside air. A plurality of housingmaterials 1204 can be disposed.

Preferably, the quality of the housing material 1204 is an insulatingsubstance such as glass or polymer. For example, there is amorphousglass (borosilicate glass, quartz, etc.), crystallization glass,ceramics glass, organic resin (acrylic resin, styrene resin,polycarbonate resin, epoxy resin, etc.) or silicone resin. In addition,ceramics can be used. It is also possible to use metallic materials,such as stainless alloy, if the adhesive 1205 is an insulating material.

As the quality of the adhesive 1205, epoxy resin, acrylate resin, etc.,can be used. In addition, thermosetting resin or light curing resin canbe used as the adhesive. However, it is required to be a material thatdoes not transmit oxygen and water to the utmost.

Preferably, a gap 1206 between the housing material and the substrate1200 is filled with inert gas (argon, neon, helium, or nitrogen).However, it is not limited to gas. An inert liquid can be used (forexample, liquid fluorocarbon typified by perfluoroalkane). A liquiddescribed in, for example, Japanese Laid-Open Patent Publication No.78519 of 1996 can be used as the inert liquid.

It is also effective to dispose a drying agent in the gap 1206. A dryerdescribed in Japanese Laid-open Patent Publication No. 148066 of 1997can be used as the drying agent. Typically, barium oxide can be used.

As shown in FIG. 12(B), the pixel portion is provided with a pluralityof pixels, each having individually isolated EL elements. All of themhave a protective electrode 1207 as a common electrode. In thisembodiment, a description was given as follows: it is preferable tocontinuously form the EL layer, the cathode (MgAg electrode), and theprotective electrode without air exposure. Instead, if the EL layer andthe cathode are formed by using the same mask, and only the protectiveelectrode is formed by another mask, a structure of FIG. 12(B) will berealized.

At this time, the EL layer and the cathode can be disposed on the pixelportion only, and are not required to be disposed on the drivingcircuit. No problem will occur even if they are disposed on the drivingcircuit, of course. However, they should not be disposed thereon inconsideration of the fact that an alkali metal is included in the ELlayer.

The protective electrode 1207 is connected to an input wiring line 1210in the region shown by reference numeral 1208 through the medium of aconnection wiring line 1209 that is made of the same material as thepixel electrode. The input wiring line 1210 is a current-feed line togive a predetermined voltage (earth potential, specifically OV in thisembodiment) to the protective electrode 1207, and is connected to theFPC 611 through the medium of a conductive paste material 1211.

Now, a description will be given of the manufacturing steps to realize acontact structure in the region 1208 with reference to FIG. 13.

First, the state of FIG. 8(A) is obtained according to the process ofthis embodiment. At this time, the first interlayer insulating film 544and the gate insulating film 514 are removed at the edge of thesubstrate (i.e., region shown by reference numeral 1208 in FIG. 12(B)),and the input wiring line 1210 is formed thereon. It is formed at thesame time as the source wiring line and the drain wiring line of FIG.8(A) are formed, of course. (FIG. 13(A))

Thereafter, when the second interlayer insulating film 553 and the firstpassivation film 552 are etched in FIG. 8(B), the region shown byreference numeral 1301 is removed, and an opening 1302 is formed. Thewiring line 1209 is then formed so as to cover the opening 1302. Theconnection wiring line 1209 is formed simultaneously with the pixelelectrode 554 in FIG. 8(B), of course. (FIG. 13B))

In this state, the formation process of the EL element (formationprocess of the third interlayer insulating film, the EL layer, and thecathode) is performed in the pixel portion. At this time, the thirdinterlayer insulating film and the EL element are designed not to beformed in the region shown in FIG. 13 by using a mask etc. The cathode557 is then formed, and the protective electrode 558 is formed by usinganother mask. As a result, the protective electrode 558 and the inputwiring line 1210 are electrically connected through the connectionwiring line 1209. The second passivation film 559 is then provided, andthe state of FIG. 13(C) is obtained.

The contact structure of the region shown by reference numeral 1208 ofFIG. 12(B) is realized by the steps mentioned above. The input wiringline 1210 is connected to the FPC 611 through a gap (note: this isfilled with the adhesive 1205. That is, the adhesive 1205 is required tohave a thickness to sufficiently flatten the level difference of theinput wiring line) between the housing material 1204 and the substrate1200. The input wiring line 1210 was described here. In the same way,other input wiring lines 612-614 are also connected to the FPC 611,passing under the housing material 1204.

Embodiment 2

In this embodiment, the structure of a pixel different from that of FIG.1(B) is shown in FIG. 14.

In this embodiment, the two pixels shown in FIG. 1(B) are arranged to besymmetrical with respect to the current-feed line 110 for giving earthpotential. That is, the current-feed line 110 is made common to the twoadjoining pixels, as shown in FIG. 14, and thereby the number ofrequired wiring lines is decreased. There is no need to change thestructure of TFTs disposed in the pixels.

This arrangement makes it possible to manufacture an even finer pixelportion, and improve the quality of an image.

In addition, the common structure of the current-feed line 110 makes itpossible to expand the line width of the current-feed line 110 withoutthe brightness of an image falling because the margin of the line widthof the current-feed line 110 increases. Thus, the influence of a voltagedrop of the current-feed line 110 can be reduced, and the voltagesupplied from the current-feed line 110 can be prevented from varyingaccording to the position of a pixel.

The structure of this embodiment can be easily achieved according to themanufacturing steps of embodiment 1.

Embodiment 3

In this embodiment, a description of forming a pixel portion having astructure different from that of FIG. 1 is given with reference to FIG.15. The same steps as in embodiment 1 can be followed up to the step forforming the second interlayer insulating film 48. The switching TFT 201covered with the second interlayer insulating film 48 and the currentcontrolling TFT 202 each have the same structure as in FIG. 1, and adescription thereof is omitted here.

In this embodiment, contact holes are made in the second interlayerinsulating film 48 and the first passivation film 47, and then the pixelelectrode 61 is formed. A 200 nm-thick aluminum alloy film (aluminumfilm that contains titanium of 1 wt %) is disposed as the pixelelectrode 61 in this embodiment. Any material can be used as the pixelelectrode on the condition that it is metallic. Preferably, it has ahigh reflectance.

The third interlayer insulating film 62 made of a silicon oxide film isformed thereon to be 300 nm thick. A 230 nm-thick MgAg electrode is thenformed as the cathode 63. And, as the EL layer 64, a 20 nm-thickelectronic transporting layer, a 40 nm-thick luminescent layer, and a 30nm-thick positive hole transporting layer are formed in this order frombelow. There is a need to form the EL layer 64 so as to be a slightlylarger pattern than the cathode 63. This makes it possible to preventthe cathode 63 from short-circuiting with the anode 65 which is formedlater.

At this time, the cathode 63 and the EL layer 64 are continuously formedwithout air exposure by the use of a vacuum deposition machine of amulti chamber method (also called cluster tool method). In more detail,the cathode 63 is first formed on all pixels by the first mask, and thenthe red-luminescence EL layer is formed by the second mask. While finelycontrolling and moving the second mask, the green-luminescence EL layerand the blue-luminescence EL layer are sequentially formed.

The second mask is simply moved in such a manner as above when pixelscorresponding to RGB are arranged like a stripe. However, in order torealize a pixel structure of a so-called delta arrangement, use can beindividually made of a third mask for the green-luminescence EL layerand a fourth mask for the blue-luminescence EL layer.

After forming the EL layer 64 in this way, the anode 65 is formedthereon to be 110 nm thick. The anode 65 is made of a transparentconductive film (in this embodiment, a thin film in which zinc oxide of10 wt % is contained in an ITO film). The EL element 206 is thus formed,and the second passivation film 66 is formed with the material shown inembodiment 1. As a result, a pixel constructed as shown in FIG. 15 iscompleted.

In the structure of this embodiment, red, green, or blue light generatedin each pixel radiates to the side opposite to the substrate on whichthe TFTs are formed. Therefore, almost all the areas in the pixel, i.e.,the region where TFTs are formed can be used as an effective luminescentregion. As a result, the effective luminescent area of a pixel isgreatly increased, and the brightness or contrast ratio (ratio betweenlight and shade) of an image is improved.

The structure of this embodiment can be freely combined with any one ofthe structures of embodiments 1 and 2.

Embodiment 4

In this embodiment, a description is given of an example of the pixelstructure of the active matrix type EL display device manufactured byembodiment 1. FIG. 16 is used for the description. In FIG. 16, referencecharacters of FIG. 1 or 2 are applied to parts corresponding to FIG. 1or 2.

In FIG. 16, reference character 201 is a switching TFT. This includes asource region 13, a drain region 14, and a gate wiring line (servablealso as a gate electrode) 106. Reference numeral 202 is a currentcontrolling TFT. This includes a source region 26, a drain region 27,and a gate electrode 30. The current controlling TFT 202 and the pixelelectrode 49 are connected electrically through the drain wiring line32. The dotted lines shown by 51 and 52 indicate the position where theEL layer 51 and the cathode 52 are formed. The EL element 203 is made upof the pixel electrode 49, the EL layer 51, and the cathode 52.

At this time, the drain wiring line 22 of the switching TFT 201 iselectrically connected to the gate electrode 30 of the currentcontrolling TFT 202 by an electric contact 1601. The gate electrode 30forms a capacitance storage 112 in a part overlapping with the sourcewiring line 31 of the current controlling TFT 202. The source wiringline 31 is connected to the current-feed line 110.

The pixel structure of FIG. 16 in this embodiment is not to limit thepresent invention at all, and is merely a preferred example. A performerof the present invention can properly determine where to form theswitching TFT, the current controlling TFT, and the capacitance storage.This embodiment can be carried out by freely combining the structure ofthis embodiment and those of embodiments 1 to 3.

Embodiment 5

In this embodiment, a description is given of a case in which the pixelstructure of the active matrix type EL display device is made differentfrom that of embodiment 4. Specifically, an example in which thematerial of the gate wiring line is made different in the pixelstructure shown in FIG. 16 is shown in FIG. 17. FIG. 17 is differentfrom FIG. 16 only in the structure of the gate wiring line. Therefore, aspecifically detailed description is omitted.

In FIG. 17, reference characters 71 a and 71 b are each a gate electrodemade of a tungsten nitride film and a lamination film of a tungstenfilm, as in the gate electrode of embodiment 1. As shown in FIG. 17,they can be designed to be individually isolated patterns, or to beelectrically connected patterns. They are in an electrically floatingstate when formed.

As the gate electrodes 71 a and 71 b, use can be made of otherconductive films, such as a lamination film of a tantalum nitride filmand a tantalum film, or an alloy film of molybdenum and tungsten.However, desirably, the film is superior in processability so as to forma fine line with a width less than 3 μm (2 μm preferably). Additionally,desirably, it is not a film including such an element as to diffuse agate insulating film and enter an active layer.

On the other hand, for the gate wiring line 72, use is made of aconductive film having a lower resistance than the gate electrodes 71 aand 71 b. Representatively, it is an alloy film largely composed ofaluminum or an alloy film largely composed of copper. The gate wiringline 72 is not required to have especially fine processability. Inaddition, the gate wiring line 72 does not overlap with an active layer,and, therefore, does not cause any trouble even if it contains aluminumor copper which diffuses easily in an insulating film.

When constructing the structure of this embodiment, in the process ofFIG. 7(D) of embodiment 1, an activating step is performed prior to theformation of the first interlayer insulating film 544. In this case,heat treatment is performed in a state in which the gate electrodes 71 aand 71 b are exposed. However, the gate electrodes 71 a and 71 b willnot be oxidized if the heat treatment is performed in a sufficientlyinert atmosphere, preferably in an inert atmosphere whose oxygenconcentration is 1 ppm or less. Accordingly, there is no fear thatresistance increases because of oxidation, or removal becomes difficultbecause of being covered with the insulating film (oxide film).

After the activating step is completed, a conductive film mainlycomposed of aluminum or copper is formed, and a gate wiring line 72 isformed according to patterning. At this time, an excellent ohmic contactis secured in a part where the gate electrodes 71 a, 71 b are in contactwith the gate wiring line 72, and, as a result, a predetermined gatevoltage can be applied to the gate electrodes 71 a and 71 b.

The structure of this embodiment is effective especially when the sizeof an image display area becomes large. The reason is described below.

Since the EL display device of the present invention is driven bydividing one frame into a plurality of sub-frames, the load imposed onthe driving circuit for driving a pixel portion is large. In order todecrease this, it is desirable to decrease the load (e.g., wiring lineresistance, parasitic capacitance, or writing capacity of a TFT) of thepixel portion as much as possible.

Concerning the writing capacity of the TFT, a critical problem does notoccur because a TFT with very high operational performance can berealized by the silicon film used in the present invention. Concerningthe parasitic capacitance added to a data wiring line or a gate wiringline, most of it is formed between the wiring line and a cathode (orprotective electrode) of an EL element formed on the wiring line.However, the parasitic capacitance is almost entirely negligible becausean organic resin film with a low dielectric constant is formed to be1.5-2.5 μm thick as a second interlayer insulating film.

From this fact, the most serious obstacle when applying the presentinvention to the EL display device whose pixel portion has a large areais the wiring line resistance of the data wiring line and the gatewiring line. It is possible, of course, to perform parallel processingby dividing the data signal side driving circuit into a plurality ofsections, or to dispose the data signal side driving circuit and thegate signal side driving circuit, with a pixel portion therebetween, andsend a signal from both sides, thus dropping the operational frequencyof the driving circuit substantially. However, if so, there will occuranother problem of increasing an area occupied by the driving circuit,for example.

Therefore, when performing the present invention, it is very effectiveto reduce the resistance of the gate wiring line as much as possible bythe structure of this embodiment. The pixel structure of FIG. 17 in thisembodiment is not at all to limit the present invention, and is merely apreferred example. This embodiment can be carried out by freelycombining the structure of this embodiment and those of embodiments 1 to3.

Embodiment 6

In the structure of FIG. 2 of embodiment 1, it is effective to use ahigh-cooling-effect material as the base film 12 disposed between theactive layer and the substrate 11. Especially, the current controllingTFT has the problem of being liable to easily generate heat and undergodeterioration caused by self-heating because it passes a relativelylarge current for a long time. According to this embodiment, the basefilm has a cooling effect, and the TFT is prevented from undergoingthermal deterioration in that situation.

As a light transmissible material having the cooling effect, there is aninsulating film that contains at least one element selected from thegroup consisting of B (boron), C (carbon), and N (nitrogen), and atleast one element selected from the group consisting of Al (aluminum),Si (silicon), and P (phosphorus).

For example, use can be made of nitride of aluminum typified by aluminumnitride (AlxNy), carbide of silicon typified by silicon carbide (SixCy),nitride of silicon typified by silicon nitride (SixNy), nitride of borontypified by boron nitride (BxNy), and phosphide of boron typified byboron phosphide (BxPy). The oxide of aluminum typified by aluminum oxide(AlxOy) is superior in light transmission, and the thermal conductivitythereof is 20 Wm⁻¹K⁻¹. Thus, it is one of the desirable materials. Inthe light transmissible materials described above, x and y are arbitraryintegers.

Other elements can be combined with the aforementioned compounds. Forexample, it is also possible to add nitrogen to aluminum oxide and usealuminum nitride oxide shown by AlNxOy. This material also has not onlya cooling effect but also an effect of preventing the invasion of wateror alkali metals. In the aluminum nitride oxide, x and y are arbitraryintegers.

Additionally, it is possible to use the material described in JapaneseLaid-open Patent Publication No. 90260 of 1987. In more detail, aninsulating film that contains Si, Al, N, O, and M can be used wherein Mis at least one kind of rare earth elements, preferably at least oneelement selected from the group consisting of Ce (cerium), Yb(ytterbium), Sm (samarium), Er (erbium), Y (yttrium), La (lantern), Gd(gadolinium), Dy (dysprosium), and Nd (neodymium). These materials alsohave not only a cooling effect but also an effect of preventing theinvasion of water or alkali metals.

Additionally, use can be made of a carbon film that includes at least adiamond thin film or an amorphous carbon film (especially, a film closeto the characteristic of diamond, called diamond-like carbon). Thesehave a very high thermal conductivity, and are quite effective as heatradiation layers. However, these have a brown color and reducetransitivity as the film thickness increases, and therefore should bemade as thin as possible (5-100 nm preferably).

A thin film made of the material having the cooling effect can be usedas a single layer, but, instead, a lamination film can be used in whichthese thin films and an insulating film that contains silicon arestacked.

The structure of this embodiment can be freely combined with any one ofthe structures of embodiments 1 to 5.

Embodiment 7

In embodiment 1, it was said that, preferably, an organic EL material isused as an EL layer. However, the present invention can also beperformed by using an inorganic EL material. In this case, since theinorganic EL material of the present time is of a very high drivingvoltage, TFTs to be used must have resisting-pressure characteristicsresistible to such a driving voltage.

If an inorganic EL material of an even lower driving voltage isdeveloped in the future, it will be applicable to the present invention.

The structure of this embodiment can be freely combined with any one ofthe structures of embodiments 1-6.

Embodiment 8

The active matrix type EL display device (EL module) formed byperforming the present invention is superior to a liquid crystal displaydevice in visibility in bright places because of its self-luminousproperties. Therefore, the present invention can be used as a displayportion of a direct-view type EL display (indicating a display equippedwith an EL module). As the EL display, there are a personal computermonitor, a TV receiving monitor, an advertisement display monitor, andso on.

The present invention can be used as a display portion of all electronicequipment that includes displays as constituent parts, including theaforementioned EL display.

As the electronic equipment, there are an EL display, video camera,digital camera, head mounted type display, car-navigator, personalcomputer, personal digital assistant (mobile computer, portabletelephone, electronic book, etc.), and picture reproducer provided withrecording media (specifically, device capable of reproducing a recordingmedium, such as compact disk (CD), laser disc (LD), or digital videodisc (DVD), and displaying the image). Examples of the electronicequipment are shown in FIG. 18.

FIG. 18(A) depicts a personal computer, which includes a main body 2001,case 2002, display portion 2003, and keyboard 2004. The presentinvention can be used as the display portion 2003.

FIG. 18(B) depicts a video camera, which includes a main body 2101,display panel 2102, voice inputting portion 2103, operation switch 2104,battery 2105, and image reception portion 2106. The present inventioncan be used as the display panel 2102.

FIG. 18(C) depicts a part of a head mounted type EL display (rightside), which includes a main body 2301, signal cable 2302, head fixationband 2303, display monitor 2304, optical system 2305, and display device2306. The present invention can be used as the display device 2306.

FIG. 18(D) depicts a picture reproducer (specifically, DVD player)provided with recording media, which includes a main body 2401,recording medium 2402 (CD, LD, DVD, etc.), operation switch 2403,display panel (a) 2404, and display panel (b) 2405. The display panel(a) chiefly displays image information, and the display panel (b)chiefly displays character information. The present invention can beused as the display panels (a) and (b). The present invention isapplicable to a CD player or a game machine as a picture reproducerprovided with recording media.

FIG. 18(E) depicts a portable (mobile) computer, which includes a mainbody 2501, camera 2502, image reception part 2503, operation switch2504, and display portion 2505. The present invention can be used as thedisplay portion 2505.

If the luminescence brightness of the EL material is enhanced in thefuture, the present invention will be applicable to a front or rear typeprojector.

The present invention has a quite wide scope of application, asmentioned above, and is applicable to electronic equipment in allfields. The electronic equipment of this embodiment can be realized bythe structure resulting from the free combination of embodiments 1 to 7.

Embodiment 9

The photographs of FIGS. 20(A) and 20(B) relate to the EL display deviceof the present invention, and, more specifically, they show imagesdisplayed by the time-division gradation method of the presentinvention. That of FIG. 20(A) uses Alq₃ (tris-8-quinolinolato aluminumcomplex), which is a low molecular organic material, as a luminescentlayer, and that of FIG. 20(B) uses PPV (polyparaphenylene-vinylene),which is a high molecular organic material, as a luminescent layer. Thespecification of the EL display devices of FIGS. 20(A) and 20(B) isshown in the following table.

TABLE 1 Display size 0.7 inches diagonally Number of pixels 640 × 480Pixel distance 22.5 μm Gradation 64 (6 bit) Aperture ratio 38% Operationclock frequency of source 12.5 MHz driving circuit Operation clockfrequency of gate 232 kHz driving circuit Voltage of driving circuit 9 VVoltage of display region 7 V Duty ratio 62.5% Color mono

EFFECT OF THE INVENTION

According to the present invention, an active matrix type EL displaydevice can be obtained that is capable of performing clearmulti-gradation display without the influence of the characteristicvariability of TFTs. In addition, a TFT having a very high operationalperformance is manufactured by forming an active layer with a siliconfilm used in the present invention, and time-division gradation displayby digital signals of the active matrix type EL display device can beperformed more effectively. In addition, a gradation failure caused bythe characteristic variability of a current controlling TFT is removedby achieving such gradation display, and high-definition imagesexcellent in color reproducibility can be obtained.

Further, the TFT itself formed on a substrate also realizes the activematrix type EL display device provided with high reliability byarranging the best structured TFTs in accordance with the performancerequired by circuits or elements.

Thus, high performance electronic equipment provided with highreliability and high image quality can be produced by mounting such anactive matrix type EL display device as a display portion (displaypanel).

1. An EL display device comprising: a pixel portion formed over asubstrate; plural pixels formed in the pixel portion; a switching TFTand a current-control TFT formed in one of the plural pixels; a firstinsulating film formed over the switching TFT and the current-controlTFT; a pixel electrode electrically connected to the current-controlTFT; a second insulating film formed over the first insulating film,wherein the second insulating film overlaps an edge of the pixelelectrode; an EL layer formed over the pixel electrode, wherein the ELlayer extends over at least an edge of the second insulating film; atransparent conductive film formed over the EL layer; and a passivationfilm formed over the transparent conductive film, wherein the edge ofthe pixel electrode is located over the first insulating film.
 2. The ELdisplay device according to claim 1, wherein the pixel electrode is ametal electrode.
 3. The EL display device according to claim 1, whereinthe pixel electrode is an aluminum alloy film.
 4. The EL display deviceaccording to claim 1, wherein the transparent conductive film comprisesindium tin oxide.
 5. The EL display device according to claim 1, whereinthe transparent conductive film is capable of functioning as an anode.6. The EL display device according to claim 1 further comprising asecond electrode formed between the pixel electrode and the EL layer. 7.The EL display device according to claim 1, wherein the passivation filmis a silicon nitride oxide film or a silicon nitride film.
 8. The ELdisplay device according to claim 1, wherein the edge of the secondinsulating film has a tapered shape.
 9. The EL display device accordingto claim 1, wherein the passivation film is in contact with thetransparent conductive film.
 10. An EL display device comprising: apixel portion formed over a substrate; plural pixels formed in the pixelportion; a switching TFT and a current-control TFT formed in one of theplural pixels; a first passivation film formed over the switching TFTand the current-control TFT; a first insulating film formed over thefirst passivation film; a pixel electrode electrically connected to thecurrent-control TFT; a second insulating film formed over the firstinsulating film, wherein the second insulating film overlaps an edge ofthe pixel electrode; an EL layer formed over the pixel electrode,wherein the EL layer extends over at least an edge of the secondinsulating film; a transparent conductive film formed over the EL layer;and a second passivation film formed over the transparent conductivefilm, wherein the edge of the pixel electrode is located over the firstinsulating film.
 11. The EL display device according to claim 10,wherein the pixel electrode is a metal electrode.
 12. The EL displaydevice according to claim 10, wherein the pixel electrode is an aluminumalloy film.
 13. The EL display device according to claim 10, wherein thetransparent conductive film comprises indium tin oxide.
 14. The ELdisplay device according to claim 10, wherein the transparent conductivefilm is capable of functioning as an anode.
 15. The EL display deviceaccording to claim 10 further comprising a second electrode formedbetween the pixel electrode and the EL layer.
 16. The EL display deviceaccording to claim 10, wherein the first passivation film is a siliconnitride oxide film or a silicon nitride film.
 17. The EL display deviceaccording to claim 10, wherein the second passivation film is a siliconnitride oxide film or a silicon nitride film.
 18. The EL display deviceaccording to claim 10, wherein the edge of the second insulating filmhas a tapered shape.
 19. The EL display device according to claim 10,wherein the second passivation film is in contact with the transparentconductive film.
 20. An electronic equipment having the display deviceaccording to claim
 1. 21. An electronic equipment having the displaydevice according to claim 10.